(China (Mainland))
Product Summary
The BFG591is a NPN silicon planar epitaxial transistor in a plastic, 4-pin SOT223 package. It is intended for applications in the GHz range such as MATV or CATV amplifiers and RF communications subscriber equipment. This device is characterized by high power gain, low noise figure, high transition frequency and so on.
Parametrics
Absolute maximum rating system: (1)VCBO, collector-base voltage: 20 V max at open emitter; (2)VCEO, collector-emitter voltage:15 V max at open base; (3)VEBO, emitter-base voltage:3 V at open collector; (4)IC, collector current (DC):200 mA max; (5)Ptot, total power dissipation:2 W max at up to Ts = 80 °C; note 1; (6)Tstg, storage temperature: -65 to +150 °C; (7)Tj, junction temperature: 150 °C max.
Features
Features:(1)High power gain; (2)Low noise figure; (3)High transition frequency; (4)Gold metallization ensures excellent reliability.
Diagrams
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 BFG591 |
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Negotiable |
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BFG591,115 |
NXP Semiconductors |
Transistors RF Bipolar Small Signal NPN 15V 7GHZ |
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