NID5004NT4G

MOSFET N-CH 40V 6.5A DPAK - NID5004NT4G

Rated 5 Rating 5 | reviews | Write a review

Price:: US $0.30~0.50 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
	US $0.30~0.50

PartNumber:: NID5004NT4G

Brand:: ON Semiconductor - ON | Pack: TO | D/C: 10+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Sold By

Mr. Toby's store

(China (Mainland))

add to my favourite

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2012-04-25

From Other Seller

Part Number:NID5004NT4G
US $0.30 - 0.50
ECA1HHG220

US $2.00 - 10.00 / Piece
(0) Remove
SIL9030CTU

US $2.50 - 5.10 / Piece
(0) Remove
Quantity:

piece

Product Summary

The NID5004NT4G is a self–protected FETs .This device is a series of power MOSFETs which utilize ON Semiconductor HDPlus technology. The self–protected MOSFET incorporates protection features such as integrated thermal and current limits. The protected MOSFETs include an integrated Drain to Gate Clamp that provides overvoltage protection from transients and avalanche. The device is protected from Electrostatic Discharge (ESD) by utilizing an integrated Gate to Source Clamp.

Parametrics

Absolute maximum ratings:(1)Drain_to_Source Voltage Internally Clamped, VDSS: ±44Vdc; (2)Gate_to_Source Voltage, VGS: 14Vdc; (3)Drain Current Continuous, ID: Internally Limited; (4)Total Power Dissipation, @ TA = 25°C (Note 1), PD: 1.3W; (5)Total Power Dissipation, @ TA = 25°C (Note 2), PD: 2.5W; (6)Thermal Resistance, Junction_to_Case, RθJC, 3.0°C/W; (7)Thermal Resistance, Junction_to_Ambient (Note 1), RθJA, 95°C/W; (8)Thermal Resistance, Junction_to_Ambient (Note 2), RθJA, 50°C/W; (9)Single Pulse Drain_to_Source Avalanche Energy(VDD = 30 Vdc, VGS = 5.0 Vdc,IL = 1.8 Apk, L = 160 mH, RG = 25 ), EAS: 273mJ; (10)Operating and Storage Temperature Range, TJ, Tstg: _55 to 150 °C.

Features

Features:(1)Short Circuit Protection; (2)In Rush Current Limit; (3)Thermal Shutdown with Automatic Restart; (4)Avalanche Rated; (5)Overvoltage Protection; (6)ESD Protection (4 kV HBM); (7)Controlled Slew Rate for Low Noise Switching; (8)AEC Q101 Qualified; (9)This is a Pb Free Device.