(China (Mainland))
Product Summary
The STB4NK60Z is a 4 A SuperMESH Power MOSFET. It is obtained through an extreme optimization of ST’s well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. The application of the STB4NK60Z is Switching applications.
Parametrics
STB4NK60Z absolute maximum ratings: (1)Drain-source voltage (VGS = 0):600V; (2)Gate- source voltage:±30V; (3)Drain current (continuous) at TC = 25℃:4A; (4)Drain current (continuous) at TC = 100℃:2.5A; (5)Drain current (pulsed):16A; (6)Total dissipation at TC = 25℃:70W; (7)Derating factor:0.56W/℃; (8)Gate source ESD(HBM-C=100 pF, R=1.5 kΩ):3000V; (9)Peak diode recovery voltage slope:4.5V/ns; (10)Storage temperature:-55℃ to 150℃; (11)Max operating junction temperature:150℃.
Features
STB4NK60Z features: (1)VDSS:600V; (2)RDS(on) max:＜2Ω; (3)PW:70W; (4)ID:4A; (5)100% avalanche tested; (6)Very low intrinsic capacitances.
Diagrams
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 STB4NK60Z |
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STB4NK60Z-1 |
STMicroelectronics |
MOSFET N-Ch, 600V-1.76ohms Zener SuperMESH 4A |
Data Sheet |
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STB4NK60ZT4 |
STMicroelectronics |
MOSFET N-Ch 600 Volt 4 Amp Zener SuperMESH |
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