(China (Mainland))
Product Summary
The QM20KD-HB is a medium power switching, insulated type mitsubishi transistor module.
Parametrics
QM20KD-HB absolute maximum ratings: (1)Collector-emitter voltage VCEX (SUS). IC=1A VEB=2V: 600V; (2)Collector-emitter voltage VCEX. VEB=2V: 600V; (3)Collector-base voltage VCBO. Emitter open: 600V; (4)Emitter-base voltage VEBO. Collector open: 7V; (5)Collector current IC –IC: 20A; (6)Collector reverse current PC. TC=25℃: 83W; (7)Base current DC: 1A; (8)Surge collector reverse current(forward diode current). Peak value of one cycle of 60Hz (half wave): 200A.
Features
QM20KD-HB features: (1)IC Collector current 20A; (2)VCEX Collector-emitter voltage 600V; (3)hFE DC current gain 250; (4)Insulated Type; (5)UL Recognized.
Diagrams
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 QM20KD-HB |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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QM200DY-24 |
Other |
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Negotiable |
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QM200DY-24B |
Other |
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Negotiable |
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QM200DY-2H |
Other |
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Data Sheet |
Negotiable |
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QM200DY-2HB |
Other |
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Data Sheet |
Negotiable |
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QM200DY-HB |
Other |
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Data Sheet |
Negotiable |
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QM200HA-24 |
Other |
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Data Sheet |
Negotiable |
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